Tofwerk will be joining Innovatrix as Gold Sponsors of our upcoming event, 4th Constructing Semiconductor FAB Summit Europe: Advances in Planning, Design and Engineering, taking place Oct 21-22, 2026, in Munich, Germany.
Bio
TOFWERK design, manufacture, and optimize ultra-sensitive, mobile mass spectrometers to comprehensively characterize the composition and purity of samples and the health of environments. Researchers and industrial customers around the world rely on their technologies for discovery and decision making.
Semiconductor Manufacturing
As semiconductor devices scale below the 2 nm node and incorporate increasingly complex materials, conventional metrology is reaching its limits. Critical contamination events go undetected in cleanrooms and process tools. Process chemistry in etch, deposition, and cleaning steps remains poorly resolved. Failure analysis cannot keep pace with fab requirements.
TOFWERK, a Bruker Company, delivers advanced semiconductor solutions powered by time-of-flight (TOF) mass spectrometry. By capturing full mass spectra in real time with high sensitivity and resolving power, TOFWERK enables comprehensive, non-targeted chemical insight from facility air (AMC) monitoring to process environments and device-level investigations.
PFAS Detection
Real-Time Detection of Gas-Phase PFAS Emissions Using the Vocus CI-TOF
- Real-time detection and quantification in ambient air or product headspace
- High sensitivity and specificity for a broad range of PFAS compounds
- Point-of-need measurements in ambient environments with changing humidity
Process Monitoring and Control
Semicon Process Solutions for Sensitive, Real-Time Monitoring of Etch Processes
- Real-time monitoring of the evolution of etch gases and all reaction products
- Plasma diagnostics based on traces of plasma species
- High dynamic range to monitor both abundant and trace-level compounds
- Sub-monolayer sensitivity for accurate end-point detection
- Detection of etch rate changes and fluctuations due to malfunction or instabilities (i.e., O2 flow meter oscillations)
- High mass resolution, high mass accuracy, and accurate isotopic distribution measurement provides accurate spectral assignment for complex and rich mass spectra
Thin Film Analysis
Depth Profiling of Thin Films Using the fibTOF for FIB-SIMS Measurements
- High speed -all secondary ions, ensuring accurate signal ratios between species
- Depth profiling resolution <10 nm
- High resolution chemical imaging (3D or 2D images, or a depth profile from a region of interest)
- Unambiguous elemental identification with high mass resolving power
- Detection of both negative and positive secondary ions
Close-to-Process Elemental Depth Profiling Using the PP-TOFMS
- High depth resolution. Nanometer thin layers can be resolved.
- High throughput and and ease of use. Without the need to transfer sample in UHV and sputtering rates as high as 40 nm/s, analysis only takes few minutes.
- Semi-quantification in one click/without reference sample. Sputtering and gas phase ionization yield only slightly vary over elements in the periodic table. The ion beam ratio method allows estimation of atomic concentration with an accuracy of a 2-3 factor for most elements.
- Full elemental coverage and high sensitivity. Major elements and dopants can be detected at any point of the depth profile. Identification of fully unknown layers and the detection of unexpected contamination becomes easy.
High Resolution Depth Profiling by fs-LA Using the icpTOF
- All the elements. All the time. The icpTOF always records complete mass spectra, so you never miss an analyte or interference signal.
- High mass resolution. The icpTOF 2R has a mass resolving power of 6000 allowing you to separate interfering ions.
- Precise isotope ratios. The icpTOF simultaneously measures all isotopes, thus eliminating the susceptibility of your measurements to source and sample fluctuations. Precision approaches statistical limits.
- High speed detection. The icpTOF records a complete mass spectrum every 12-50 µs making it the optimum detector for fast transient signals such laser ablation pulses.
- Compatibility with major laser companies
- Dedicated workflow for laser ablation
AMC Monitoring
The TOFWERK Semicon AMC Solution for Simultaneous, Real-Time AMC Monitoring for Acids (Corrosives), Bases, and Condensables
The Semicon AMC Monitor provides sensitive and simultaneous measurements for each molecular category – acids (Corrosives), bases, condensables and VOCs – instantaneously, in real time, without any sample preparation or handling.
- Ultra-fast measurements (milliseconds)
- Ideal for dynamic processes or high-throughput screening
- Simultaneous detection of critical AMC classes
- Highly sensitive quantification
- pptV limits of detection
- Robust, accurate, and reliable detection and identification
- Mobile analysis or multi-port facility monitoring without sample preparation
TOFWERK Market Solutions
TOFWERK Semicon provides fully integrated solutions for characterization and monitoring of semiconductor processes and gas-phase contaminants. Our time-of-flight mass spectrometry technology delivers fast, sensitive real-time detection of VOCs, VICs, precursors, byproduct and trace species optimized for semiconductor applications.
Tofwerk at the 4th Constructing Semiconductor FAB Summit
Connect with Tofwerk here to gain their expertise for your semiconductor fab plant design.
To meet with Tofwerk and discuss your fab construction needs, network with peers and solution providers and attend talks from industry leaders, book your place to attend the 4th Constructing Semiconductor FAB Summit Europe: Advances in Planning, Design and Engineering, taking place Oct 21-22, 2026, in Munich, Germany.
For more information, click here or email us at info@innovatrix.eu for the event agenda. Visit our LinkedIn to stay up to date on our latest speaker announcements and event news.
